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67‐2: Requirement of a Polyimide Substrate to Achieve High Thin‐film‐transistor Reliability
Author(s) -
Kinoshita Tomoatsu,
Ishiyama Yuichiro,
Fujimori Takashige,
Masuda Kenta,
Takahashi Kenichi,
Tanaka Masanobu,
Arai Toshiaki
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12242
Subject(s) - polyimide , materials science , thin film transistor , substrate (aquarium) , optoelectronics , reliability (semiconductor) , transistor , electrical resistivity and conductivity , layer (electronics) , composite material , electrical engineering , engineering , power (physics) , oceanography , physics , quantum mechanics , voltage , geology
The reliability of top‐gate oxide thin‐film‐transistors on a polyimide substrate correlates with the volume resistivity of the polyimide substrate. Hence, the polyimide used as a TFT substrate should have a high resistivity of 3×10 17 ohm‐cm or more to ensure high TFT reliability equal to the TFT on a glass substrate.