67‐2: Requirement of a Polyimide Substrate to Achieve High Thin‐film‐transistor Reliability | Zendy

Kinoshita Tomoatsu | Zendy; Ishiyama Yuichiro | Zendy; Fujimori Takashige | Zendy; Masuda Kenta | Zendy; Takahashi Kenichi | Zendy; Tanaka Masanobu | Zendy; Arai Toshiaki | Zendy

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67‐2: Requirement of a Polyimide Substrate to Achieve High Thin‐film‐transistor Reliability

Author(s) -

Kinoshita Tomoatsu,

Ishiyama Yuichiro,

Fujimori Takashige,

Masuda Kenta,

Takahashi Kenichi,

Tanaka Masanobu,

Arai Toshiaki

Publication year - 2018

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.12242

Subject(s) - polyimide , materials science , thin film transistor , substrate (aquarium) , optoelectronics , reliability (semiconductor) , transistor , electrical resistivity and conductivity , layer (electronics) , composite material , electrical engineering , engineering , power (physics) , oceanography , physics , quantum mechanics , voltage , geology

The reliability of top‐gate oxide thin‐film‐transistors on a polyimide substrate correlates with the volume resistivity of the polyimide substrate. Hence, the polyimide used as a TFT substrate should have a high resistivity of 3×10 17 ohm‐cm or more to ensure high TFT reliability equal to the TFT on a glass substrate.

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