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67‐1: Invited Paper: Doped Organic Transistors ‐ Increased Stability and Reproducibility for Active Matrix Displays
Author(s) -
Liu Shiyi,
Al-Shadeedi Akram,
Kaphle Vikash,
Lüssem Björn
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12241
Subject(s) - doping , materials science , optoelectronics , reproducibility , field effect transistor , transistor , stability (learning theory) , matrix (chemical analysis) , nanotechnology , computer science , electrical engineering , chemistry , engineering , composite material , voltage , chromatography , machine learning
Doping Organic Field‐Effect Transistors (OFETs) is increasingly accepted as a means to increase their performance and stability, in particular for AM displays. A theory of doped depletion type OFETs is presented. The benefits of channel doping are discussed, in particular in terms of a reduction of gate bias stress effects.