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P‐62: The Process and Characteristic of new High Thickness Negative Photoresist
Author(s) -
Zhang Jiaxiang,
Wang Yanqiang,
Tong Shuo,
Zhou Yongshan,
Feng Longqiang,
Qing Yifeng,
Lu Kai,
Huang Dongsheng,
Chen Si,
Wang Wei
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12213
Subject(s) - photoresist , materials science , morphology (biology) , process (computing) , composite material , line (geometry) , dose dependence , computer science , mathematics , geometry , biology , layer (electronics) , genetics , endocrinology , operating system
In this paper, the process and characteristic of a new kind of high thickness negative photoresist were studied. Through process optimization, the 60~110um height post spacer (PS) was achieved successfully in 5.5G production line. The PS morphology was in good condition and the elastic recovery rate could more than 90%.This paper also studied the influence on the PS at different dose quantity. The dose quantity had little influence on PS morphology, but a large effect on the elastic recovery rate. When the dose quantity was greater than 400mj, the elastic recovery rate could achieve the best state.

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