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P‐59: Improving TFT Structure Uniformity in G8.5 LCDs
Author(s) -
Liu Xiao Di,
Sun Liang,
Lin Hsi Chien,
Chou Yi Fang,
Chen Shu-jhih,
Li Wen Ying,
Zeng Li Mei,
Wang Tian Hong,
Xu Hong Yuan,
Lee Chia Yu,
Yi Chiu Chung
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12181
Subject(s) - photoresist , materials science , optoelectronics , silicon , process (computing) , nanotechnology , amorphous solid , amorphous silicon , modulation (music) , computer science , chemistry , physics , crystallography , crystalline silicon , layer (electronics) , operating system , acoustics
Methods for lessening the AS tail and N + tail were systematically investigated in G8.5 glass for LCD product development including novel structure designs and matched 4‐Mask process. While matched 4‐Mask process had success in tails reducing, I on keeping, stability improving and I off decreasing at higher negative voltage by optimized O 2 ashing process, further efforts were still indispensable. Novel mask structure designs were provided using photoresist thickness modulation method for 4‐Mask process architecture to ulteriorly reduce the tails. Less amorphous silicon tail (AS tail) and heavy doped amorphous silicon tail (N + tail) were attained in both inner and outline frame beside the second metal solely by structure design, which limited the scope of N + tail within 0.5 um and AS tail about 1.2um, respectively. What’s more, the N + tail could be further decreased by cooperating with the matched 4‐Mask process using the optimized recipe.