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P‐50: Effects of Fabrication Process Variation on the Operation of OLED Pixel Circuit
Author(s) -
Choi KwangHyun,
Sohn YoungHa,
Moon GeumJu,
Park KeeChan,
Yoon Sukin,
Jeong Il Hwa,
Youn Hyung-Jin
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12173
Subject(s) - parasitic capacitance , capacitance , oled , materials science , capacitive coupling , optoelectronics , capacitive sensing , voltage , process variation , threshold voltage , transistor , electrical engineering , physics , engineering , layer (electronics) , electrode , quantum mechanics , composite material
Non‐uniform parasitic capacitance at the storage node of OLED pixel circuit varies the gate‐to‐source voltage of driving transistor and therefore leads to brightness variation. Both the charging speed of the capacitance during threshold voltage compensation and the capacitive coupling effects from switching signal lines can be different due to the parasitic capacitance variation. We report how the parasitic capacitance varies due to overlay misalignment and line width deviation during the fabrication process. We also report how the capacitance variation affects the emission current of OLED pixel.