Premium
P‐47: An OLEDoS Pixel Circuit with Extended Data Voltage Range for High Resolution Micro‐Displays
Author(s) -
Huo Xinxin,
Liao Congwei,
Wu Jixiang,
Yi Shuiping,
Wang Ying,
Jiao Hailong,
Zhang Min,
Zhang Shengdong
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12170
Subject(s) - pixel , threshold voltage , transistor , voltage , cmos , capacitor , compensation (psychology) , materials science , electrical engineering , computer science , optoelectronics , engineering , artificial intelligence , psychology , psychoanalysis
A new OLEDoS pixel circuit is proposed for high resolution micro‐displays with improved image quality. The data voltage range is extended by using two coupling capacitors to raise the voltage at the source electrode of the driving transistor. Furthermore, the image quality is improved by a compensation scheme of the threshold voltage variation of the driving transistor. The simulations on the basis of CSMC 0.25 µm CMOS model are used to verify the performance of the proposed pixel circuit. It is shown that the data voltage of the proposed pixel circuit ranges from 1.5 V to 3.05 V, which is 2.5 times of that of the conventional 2T1C pixel circuit. The emission current error is decreased to −2.6% ~ 2.6% with ±5 mV threshold voltage variation of the driving transistor for the proposed circuit.