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P‐46: Gate Driver Circuit with AC Driven Pull‐down TFT for Depletion Mode a‐IGZO TFTs
Author(s) -
Kim Jin-Ho,
Oh Jongsu,
Park KeeChan,
Jeon Jae-Hong,
Kim Yong-Sang
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12169
Subject(s) - thin film transistor , electrical engineering , transistor , capacitor , gate driver , materials science , optoelectronics , power (physics) , logic gate , voltage , engineering , physics , layer (electronics) , quantum mechanics , composite material
This paper proposes a new gate driver using depletion mode a‐IGZO thin film transistors (TFTs). We propose the gate driver structure with an AC driven pull‐down TFT in order to gain high stability, to decrease the threshold voltage (V th ) shift of the pull‐down TFT, and a gate driver without a DC leakage current path in order to gain low‐power consumption. The proposed gate driver is designed with a capacitor coupling driving circuit for an AC driven pull‐down TFT that is based on the circuit design concept of the improved negative V th limit for circuit operation and low‐power using the depletion mode a‐IGZO TFT, as presented in our reported paper. The proposed gate driver circuit with the AC driven pull‐down TFT maintain the almost same normalized value at ‐1~3V of V th range when compared to the results of circuit with the DC driven pull‐down TFT in the published paper by our group. However, the proposed circuit has the lower normalized value at ‐5~‐3V of V th range when compared to the result of circuit in our reported paper. The proposed circuit can maintain the power consumption within 3.65 times of the normal value if ‐5V of the V th of the a‐IGZO TFTs.