P‐22: Fabrication of Oxide‐Based Phototransistors for Visible Light Detection via Nanowire Interfaces | Zendy

Kim Dongwoo | Zendy; Kim Yeong-gyu | Zendy; Chung Jusung | Zendy; Kang Byung Ha | Zendy; Lee Jin Hyeok | Zendy; Kim Hyun Jae | Zendy

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P‐22: Fabrication of Oxide‐Based Phototransistors for Visible Light Detection via Nanowire Interfaces

Author(s) -

Kim Dongwoo,

Kim Yeong-gyu,

Chung Jusung,

Kang Byung Ha,

Lee Jin Hyeok,

Kim Hyun Jae

Publication year - 2018

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.12140

Subject(s) - materials science , responsivity , optoelectronics , nanowire , oxide , fabrication , visible spectrum , titanium dioxide , indium , indium tin oxide , titanium oxide , photodiode , nanotechnology , photodetector , chemical engineering , thin film , metallurgy , medicine , alternative medicine , pathology , engineering

This work shows an oxide‐based phototransistor that senses visible light by creating highly defective interfaces (HDIs). HDIs are fabricated by using nanowires of hafnium oxide (HfO 2 ) and titanium dioxide (TiO 2 ) embedded in indium gallium zinc oxide (IGZO). It sensed red light with photo responsivity of 178.7 A/W and a signal‐to‐noise ratio of 10 5 .

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