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P‐21: Three‐Mask Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology for High‐Resolution AMOLED Application
Author(s) -
Li Jiapeng,
Lu Lei,
Xia Zhihe,
Wang Sisi,
Feng Zhuoqun,
Kwok Hoi-Sing,
Wong Man
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12139
Subject(s) - thin film transistor , amoled , materials science , transistor , optoelectronics , capacitance , metal , oxide , parasitic capacitance , electrical engineering , nanotechnology , electrode , active matrix , metallurgy , chemistry , voltage , engineering , layer (electronics)
Incorporated with the self‐aligned definition of the active island, a one‐mask‐reduced elevated‐metal metal‐oxide (EMMO) thin‐film transistor (TFT) with thermally‐induced source/drain regions was proposed for high‐resolution AMOLED application. Such three‐mask EMMO TFT combines the advantages of small device footprint, low manufacture cost, reduced overlap parasitic capacitance and good device characteristics.