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P‐20: Towards High‐Performance and Cost‐Effective Top‐Gated Oxide TFTs with Hybrid‐Phase Microstructural Channels
Author(s) -
Deng Sunbin,
Chen Rongsheng,
Li Guijun,
Zhang Meng,
Xia Zhihe,
Wong Man,
Kwok Hoi-Sing
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12138
Subject(s) - materials science , optoelectronics , microstructure , transistor , oxide , phase (matter) , reduction (mathematics) , realization (probability) , nanotechnology , electrical engineering , composite material , metallurgy , engineering , chemistry , geometry , mathematics , statistics , organic chemistry , voltage
A new type of oxide semiconductor with hybrid‐phase microstructure was introduced, and the general top‐gated TFTs exhibited high, stable and spatially uniform electrical performance. Moreover, the modified top‐gated devices with one mask reduction were demonstrated, enabling more cost‐effective manufacturing. The acquired process impacts could further guide the realization of self‐aligned devices.