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P‐15: The Use of Fluorination to Enhance the Performance and the Reliability of Elevated‐Metal Metal‐Oxide Thin‐Film Transistors
Author(s) -
Xia Zhihe,
Lu Lei,
Li Jiapeng,
Kwok Hoi-Sing,
Wong Man
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12133
Subject(s) - thin film transistor , materials science , oxide , metal , passivation , zinc , indium , indium tin oxide , reliability (semiconductor) , gallium , optoelectronics , transistor , thin film , nanotechnology , metallurgy , layer (electronics) , electrical engineering , power (physics) , physics , engineering , quantum mechanics , voltage
The effects of fluorination on elevated‐metal metal‐oxide (EMMO) thin‐film transistors (TFT) were investigated. Attributed to the effective passivation of defects in the metal oxide, both the scalability and the reliability were enhanced on fluorinated indium‐gallium‐zinc oxide (IGZO) and indium‐tin‐zinc oxide (ITZO) EMMO TFTs.