Premium
P‐14: Transient Response Properties of Nitrogen‐Doped Amorphous InGaZnO Thin Film Transistors
Author(s) -
Dong Chengyuan,
Tong Xianyu,
Xie Haiting,
Zhang Lei,
Liu Guochao,
Zhou Yan
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12132
Subject(s) - thin film transistor , transient (computer programming) , materials science , amorphous solid , doping , optoelectronics , transistor , nitrogen , transient response , nanotechnology , electrical engineering , crystallography , chemistry , computer science , voltage , layer (electronics) , engineering , operating system , organic chemistry
The transient response properties of nitrogen‐doped amorphous InGaZnO (a‐IGZO:N) thin film transistors (TFTs) improved first and then became worse with the N 2 flow rate increasing, where the best one occurred at N 2 flow rate=1 sccm. A theoretical model was proposed based on the measurement results of transfer curves and positive bias stresses, indicating that the change of trap states in a‐IGZO:N TFTs, rather than the variation of their field‐effect mobility, should dominate the transient response properties of devices.