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80‐2: AMQLED Display with Solution‐Processed Oxide TFT Backplane
Author(s) -
Kim Jeonggi,
Lee Jihun,
Jang Jin
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12129
Subject(s) - thin film transistor , backplane , optoelectronics , materials science , quantum dot , diode , active matrix , doping , oxide thin film transistor , light emitting diode , oxide , transistor , layer (electronics) , nanotechnology , electrical engineering , engineering , voltage , metallurgy
We report a 4‐inch active matrix quantum‐dot light‐emitting diode (AMQLED) with solution‐processed oxide thin‐film transistors (TFTs) backplane and quantum‐dot light‐emitting diode (QLED). The oxide TFT exhibits the average field‐effect mobility over 5 cm 2 V −1 s −1 . Highly efficient green QLEDs are demonstrated by using metal doped Li doped ZnO as an electron transporting layer, which exhibit the current efficiency over 63 cd A −1 .