80‐2: AMQLED Display with Solution‐Processed Oxide TFT Backplane | Zendy

Kim Jeonggi | Zendy; Lee Jihun | Zendy; Jang Jin | Zendy

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80‐2: AMQLED Display with Solution‐Processed Oxide TFT Backplane

Author(s) -

Kim Jeonggi,

Lee Jihun,

Jang Jin

Publication year - 2018

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.12129

Subject(s) - thin film transistor , backplane , optoelectronics , materials science , quantum dot , diode , active matrix , doping , oxide thin film transistor , light emitting diode , oxide , transistor , layer (electronics) , nanotechnology , electrical engineering , engineering , voltage , metallurgy

We report a 4‐inch active matrix quantum‐dot light‐emitting diode (AMQLED) with solution‐processed oxide thin‐film transistors (TFTs) backplane and quantum‐dot light‐emitting diode (QLED). The oxide TFT exhibits the average field‐effect mobility over 5 cm 2 V −1 s −1 . Highly efficient green QLEDs are demonstrated by using metal doped Li doped ZnO as an electron transporting layer, which exhibit the current efficiency over 63 cd A −1 .

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