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P‐5: The Effect of Light‐shield Metal Layer on the IV Performance of the P‐type LTPS TFT
Author(s) -
Zhao Meng,
Zhang Hao,
Sun Yanliu,
Wang Lei,
Liu Zheng,
Liu Libin,
Kao Shanchen
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12101
Subject(s) - thin film transistor , layer (electronics) , materials science , shield , oled , optoelectronics , substrate (aquarium) , voltage , luminance , composite material , optics , electrical engineering , physics , engineering , petrology , oceanography , geology
To integrate the function of finger‐print recognition within the OLED display panel, a light‐shield (LS) metal layer is incorporated underneath the buffer layer to form fingerprint image on the sensor based on the principle of puncture‐forming picture. Since the LS metal layer is underneath the LTPS TFT, it has some impact on the IV performance of the p‐type LTPS TFT. It has been shown that the floating LS layer causes the kink effect on the output characteristics curves of the p‐type TFT. Upon putting bias on the LS layer, the threshold voltage (V th ) shifting has been observed as well as the eliminating of the kink effect caused by the floating LS layer. The V th shifting effect may be explained by the substrate bias effect. The biased LS layer may increase the uniformity of the threshold voltage throughout the whole panel, gives better image quality.