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P‐2: The Improved Photosensitivity of Amorphous In‐Ga‐Zn‐O TFTs with Gap‐type Structure
Author(s) -
Chan Po-Chun,
Tai Ya-Hsiang,
Liu Han-Wen
Publication year - 2018
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12098
Subject(s) - thin film transistor , photosensitivity , optoelectronics , materials science , amorphous solid , transistor , infrasound , layer (electronics) , electrical engineering , nanotechnology , chemistry , engineering , physics , crystallography , voltage , acoustics
The photosensitivity of gap‐gate type amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs) under visible light has been studied. With the very same process, the gap‐type TFTs can be made into sensing array with the conventional ones. As a sensing device, the high ratio of photo and dark current and the steady leakage current provide the better signal to noise.