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P‐211: Mechanism Analysis of SiOxNy Peeling on the OGS Organic Film Process
Author(s) -
Ma Weijie,
Shao Xibin,
guo Zongjie,
Zhang Ming,
Chen Qicheng,
Xie Taofeng,
Hu Haifeng,
Yin Liuyue
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12085
Subject(s) - photoresist , materials science , layer (electronics) , yield (engineering) , composite material , etching (microfabrication) , chemical engineering , engineering
Comprehensive the above results, SiOxNy peeling on OC photoresist layer has a serious impact on the yield of products. This paper found that SiOxNy peeling reason is the process of acid attacking OC photoresist surface, which resulted in 200‐800Å expansion zone. The characterization confirmed that organic material was residue on OC photoresist expansion zone. The paper also shows organic substance was vaporized after high temperature and the dense SiOxNy film result in difficult to release gas, furthmore SiOxNy film bubble appearance. The experiment results show that by adding 230℃ anneal after Metal etching and Strip process, the Peeling can be solved which can improve the yield of the product.