Premium
P‐186: Realization of Low‐Voltage Drop across Charge Generation Layer using Bi‐layer Oxide Semiconductors for Tandem OLEDs
Author(s) -
Yang Hongsheng,
Kim Junghwan,
Hosono Hideo
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12043
Subject(s) - tandem , optoelectronics , materials science , oled , voltage drop , ohmic contact , layer (electronics) , semiconductor , diode , drop (telecommunication) , voltage , nanotechnology , electrical engineering , composite material , engineering
The efficient charge generation ability of the MoOx/transparent amorphous oxide semiconductor (TAOS) bi‐layer is reported. The MoOx/TAOS bi‐layer charge generation layer (CGL) exhibited high optical transparency, low carrier injection barrier and low driving voltage for tandem OLEDs. It was also discovered that TAOS has ohmic contact with MoOx, which resulted in very small voltage drop across the charge generation layer. These results suggest that novel tandem white OLEDs with low driving voltage would be realized using the MoOx/ TAOS CGL.