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P‐183: Study of Electrical Probing through Thin‐film Encapsulation Made of Al 2 O 3 Films Deposited by Low Temperature ALD onto Different Metallic Underlayers
Author(s) -
Maindron Tony,
Troc Nicolas,
Aventurier Bernard,
Mandrillon Vincent,
Delaye Vincent,
Vandeneynde Aurelie
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12025
Subject(s) - materials science , amorphous solid , oxide , metal , indentation , composite material , atomic layer deposition , nanoindentation , thin film , layer (electronics) , nanotechnology , metallurgy , crystallography , chemistry
A qualitative study of electrical probing through 25 nm thick amorphous Al 2 O 3 barrier layers, made by low temperature ALD, has been developed. It has been found that the effectiveness of probing depends on the metallic layer beneath the oxide barrier. While a 100 nm thick Cr layer does not allow any probing through the oxide, softer metals like Al turn out to be ideal candidates. From a mechanical point‐of‐view, nano‐indentation studies (normal nano‐indentation with a Berkovitch indenter) onto Al 2 O 3 films made onto the different metals reveal that their mechanical properties are different. While Al 2 O 3 onto Cr is very stiff, Al 2 O 3 deposited onto Al is softer, allowing electrical probes to reach the metal underneath.