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P‐135: Dickson Charge Pumps Made of Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistors on Foil‐Substrates
Author(s) -
Schimpf Simon,
Baur Holger,
Fruehauf Norbert
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12018
Subject(s) - thin film transistor , materials science , foil method , transistor , optoelectronics , oxide , indium , dielectric , metal , zinc , electrical engineering , nanotechnology , metallurgy , composite material , voltage , engineering , layer (electronics)
We present Dickson charge pumps made of bottom gate staggered oxide TFTs manufactured on plastic foil substrates. Therefore, new processes for vias and line crossings with anodically oxidized dielectrics were developed and introduced to an existing low temperature process for metal‐oxide thin film transistors. A flexible electronic paper display was realized to show possible applications.