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Paper No P36: Optimization of H 2 O Annealing for High‐Performance Low‐Temperature Solution‐Processed Oxide Thin‐Film Transistors
Author(s) -
Lee JeongSoo,
Lee SooYeon,
Han MinKoo,
Kim YongHoon,
Kwon JangYeon
Publication year - 2013
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.12
Subject(s) - thin film transistor , annealing (glass) , materials science , threshold voltage , transistor , thin film , oxide , optoelectronics , tin oxide , tin , zinc , saturation (graph theory) , analytical chemistry (journal) , voltage , nanotechnology , electrical engineering , metallurgy , chemistry , layer (electronics) , engineering , mathematics , combinatorics , chromatography
We fabricated 350°C low temperature solution‐processed zinc tin oxide thin film transistors by employing H 2 O wet annealing, which is considerably lower than widely used 500°C. We have optimized 350°C H 2 O wet annealing condition to achieve good electrical characteristics such as threshold voltage and saturation mobility.