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P‐78: Calibration of a‐InGaZnO Thin Film Transistors with Various Channel Lengths using TCAD Simulation
Author(s) -
Tak Nam-Kyun,
Lee Won-Seok,
Kim Sae-Han,
Choi In-Chol,
Kim Jin-Young,
Han Ji-Ung,
Choi Jin-Hyung,
Hwang Man-Gyu,
Um Jae Gwang,
Lee Suhui,
Billah Mohammad Masum,
Jang Jin
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11942
Subject(s) - thin film transistor , channel (broadcasting) , calibration , materials science , technology cad , optoelectronics , point (geometry) , transistor , electronic engineering , electrical engineering , cad , nanotechnology , engineering , mathematics , engineering drawing , voltage , layer (electronics) , geometry , statistics
We proposed the calibration procedure of a‐InGaZnO Thin Film Transistors (a‐IGZO TFTs) using Technology Computer Aided Design (TCAD) simulation. The various channel lengths of 5.2μm, 7.3μm, 30.3μm, 50.6μm, 81μm, and 152.2μm are fabricated and used for verifying the calibration results. The parameters of obtained from 152.2μm channel length TFT are applied to other devices with different channel lengths. From manufacturing point of view, we extracted the value of channel length reduction of TFTs from the output characteristics using TCAD simulation.