P‐76: Effect of a‐IGZO Thickness Variation on Device Uniformity and Drain Currents for Dual and Single Gate Driving TFTs | Zendy

Billah Mohammad Masum | Zendy; Hasan Md Mehedi | Zendy; Jeong Duk Young | Zendy; Um Jae Gwang | Zendy; Jang Jin | Zendy

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P‐76: Effect of a‐IGZO Thickness Variation on Device Uniformity and Drain Currents for Dual and Single Gate Driving TFTs

Author(s) -

Billah Mohammad Masum,

Hasan Md Mehedi,

Jeong Duk Young,

Um Jae Gwang,

Jang Jin

Publication year - 2017

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.11940

Subject(s) - thin film transistor , backplane , materials science , optoelectronics , dual (grammatical number) , transistor , yield (engineering) , electrical engineering , nanotechnology , engineering , voltage , composite material , art , literature , layer (electronics)

We studied the effect of a‐IGZO thickness (t IGZO ) on device uniformity and drain current (I D ) of a‐IGZO thin‐film‐transistors (TFTs) driven by the single gate (SG) and dual‐gate driving (DG‐driving). Numerical simulation using fitting density‐of‐states (DOS) exhibits ~5 times larger I D and excellent uniformity with DG‐driving TFTs for a‐IGZO t IGZO <20 nm than SG‐TFT and enables the opportunity of high yield backplanes using DG‐TFTs for next generation high‐performance display applications.

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