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P‐53: A Novel Pixel Circuit Providing Expanded Input Voltage Range for OLEDoS Microdisplays
Author(s) -
Liu Binjie,
Ding Dedong,
Zhou Tianyu,
Zhang Min
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11916
Subject(s) - pixel , subthreshold conduction , voltage , dot pitch , threshold voltage , electrical engineering , computer science , electronic engineering , engineering , transistor , artificial intelligence
A novel pixel circuit providing expanded data voltage range is proposed for high resolution and high image quality organic light‐emitting diode‐on‐silicon (OLEDoS) microdisplay applications. The proposed pixel circuit adopts a structure of four series connected NMOSFETs (4‐SCN) to expand the input data voltage range, within which the circuit operates in the subthreshold region. In addition, the pixel circuit has improved image quality by introducing a compensation scheme. The proposed circuit is verified by the simulation based on a 0.18 μm BCDlite Isolation process. The proposed circuit can be integrated into a unit sub‐pixel area of 2.9 × 8.7 μm 2 . The simulation results show that the input data voltage range of the proposed pixel circuit is 6.26 times wider than that of the traditional 2T1C pixel circuit [1], which is 4.42V. And the emission current deviation ranges from ‐4.7% to +4.2% under the threshold voltage variation of ±5 mV, which is 31.01% for a traditional 2T1C pixel circuit [1].