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P‐222L: Kim Late‐News Poster: Fabrication of Nitrocellulose based Organic Material as a Gate Dielectric Layer for Oxide Thin Film Transistor
Author(s) -
Kim Won-Gi,
Tak Young Jun,
Kim Yeong-gyu,
Chung Jusung,
Kang Byung Ha,
Kim Hyun Jae
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11897
Subject(s) - collodion , gate dielectric , materials science , dielectric , thin film transistor , amorphous solid , optoelectronics , gate oxide , layer (electronics) , fabrication , transistor , high κ dielectric , parylene , organic field effect transistor , nanotechnology , field effect transistor , composite material , electrical engineering , chemistry , membrane , alternative medicine , voltage , pathology , engineering , biochemistry , medicine , polymer , organic chemistry
We proposed a novel organic material, named collodion, as a gate dielectric layer for amorphous indium gallium zinc oxide thin film transistor. The collodion was fabricated at low temperature (125°C) and had superior dielectric characteristics (10 -10 A/cm 2 at 50 V) and dielectric constant (~6.57) for gate dielectric layer.