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P‐221L: Late‐News Poster : Indium Gallium Zinc Oxide based Phototransistor for Visible Light Detection by Stacking Solution Processed Defective Oxide Layer
Author(s) -
Tak Young Jun,
Chung Jusung,
Kim Yeong-gyu,
Kim Won-Gi,
Kang Byung Ha,
Kim Hyun Jae
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11895
Subject(s) - stacking , thin film transistor , materials science , optoelectronics , oxide , layer (electronics) , indium , zinc , photodiode , gallium , visible spectrum , nanotechnology , chemistry , metallurgy , organic chemistry
Here, we suggest IGZO thin film transistors (TFTs) for detection of visible light region by stacking solution processed defective oxide layer (DOL). DOL was formed at low temperature to intentionally induce higher carbon residues and uncoordinated oxygen species. As a result, IGZO TFTs with DOL showed significantly high detectability under visible light region compared to those without DOL.