P‐33: High‐Mobility CdSe Thin‐Film Transistors and Circuits by Sol‐gel Method

We exploit large‐area and high‐performance solution‐processed CdSe thin‐film transistors (TFTs) and 7‐stage ring oscillators. A CdSe thin‐film was successfully demonstrated using relative low temperature (<400 °C) sol‐gel processing via organoselenide and cadmium precursors. A CdSe thin‐film from commercial organic solvent process was used for active layer of thin‐film transistors and integrated circuits which demonstrate electron saturation mobilities exceeding 152 cm 2 /V‐s and frequency of 1 MHz in 7‐stage ring oscillators on borosilicate glass substrates.