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P‐33: High‐Mobility CdSe Thin‐Film Transistors and Circuits by Sol‐gel Method
Author(s) -
Kwon Sung Min,
Kim Myung Gil,
Jung Su Min,
Park Sung Kyu
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11894
Subject(s) - thin film transistor , materials science , transistor , optoelectronics , thin film , borosilicate glass , electronic circuit , saturation (graph theory) , layer (electronics) , nanotechnology , electrical engineering , composite material , voltage , engineering , mathematics , combinatorics
We exploit large‐area and high‐performance solution‐processed CdSe thin‐film transistors (TFTs) and 7‐stage ring oscillators. A CdSe thin‐film was successfully demonstrated using relative low temperature (<400 °C) sol‐gel processing via organoselenide and cadmium precursors. A CdSe thin‐film from commercial organic solvent process was used for active layer of thin‐film transistors and integrated circuits which demonstrate electron saturation mobilities exceeding 152 cm 2 /V‐s and frequency of 1 MHz in 7‐stage ring oscillators on borosilicate glass substrates.