Premium
P‐32: Light Shielding Layers Enabled Full Swing Multi‐Layer MoS 2 Inverters For the Application of Photodetectors
Author(s) -
Ryu Jae Hyeon,
Baek Geun-Woo,
Yu Seung Jae,
Seo Seung Gi,
Jin Sung Hun
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11892
Subject(s) - optoelectronics , photodetector , materials science , electromagnetic shielding , swing , diode , layer (electronics) , light emitting diode , wavelength , blue light , physics , nanotechnology , acoustics , composite material
Multi‐layered MoS 2 inverters with light shielding (LS) layers were fabricated and demonstrated for application in highly sensitive photo detectors, exploiting the particular advantages of an atomically thin layer and a sizable electrical band gap. The photoleakage behaviors of the inverters under changing wavelengths of light were experimentally demonstrated to occur in a controlled manner, and were analytically validated by load‐line analysis. When the inverters were operated with a depletion load in the light of blue light emitting diodes (LEDs), the low noise margin (NML) and transition width were significantly enhanced, by approximately 20 and 220%, respectively, as compared to those of the inverters in the dark.