P‐32: Light Shielding Layers Enabled Full Swing Multi‐Layer MoS 2  Inverters For the Application of Photodetectors | Zendy

Ryu Jae Hyeon | Zendy; Baek Geun-Woo | Zendy; Yu Seung Jae | Zendy; Seo Seung Gi | Zendy; Jin Sung Hun | Zendy

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P‐32: Light Shielding Layers Enabled Full Swing Multi‐Layer MoS 2 Inverters For the Application of Photodetectors

Author(s) -

Ryu Jae Hyeon,

Baek Geun-Woo,

Yu Seung Jae,

Seo Seung Gi,

Jin Sung Hun

Publication year - 2017

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.11892

Subject(s) - optoelectronics , photodetector , materials science , electromagnetic shielding , swing , diode , layer (electronics) , light emitting diode , wavelength , blue light , physics , nanotechnology , acoustics , composite material

Multi‐layered MoS 2 inverters with light shielding (LS) layers were fabricated and demonstrated for application in highly sensitive photo detectors, exploiting the particular advantages of an atomically thin layer and a sizable electrical band gap. The photoleakage behaviors of the inverters under changing wavelengths of light were experimentally demonstrated to occur in a controlled manner, and were analytically validated by load‐line analysis. When the inverters were operated with a depletion load in the light of blue light emitting diodes (LEDs), the low noise margin (NML) and transition width were significantly enhanced, by approximately 20 and 220%, respectively, as compared to those of the inverters in the dark.

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