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P‐24: A Novel Method to Improve the LTPS Devices on Flexible Substrate by Off‐state Bias Stress
Author(s) -
Hsu Ting-Yu,
Li Hung-Wei,
Huang Ya-Qin,
Chen Chia-Kai,
Tsai Chih-Hung,
Lu Hsueh-Hsing,
Lin Yu-Hsin
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11889
Subject(s) - millisecond , materials science , optoelectronics , trapping , stress (linguistics) , substrate (aquarium) , thin film transistor , electric field , state (computer science) , nanotechnology , computer science , physics , ecology , linguistics , philosophy , algorithm , biology , oceanography , layer (electronics) , quantum mechanics , astronomy , geology
This paper reports the effect of off‐state stress on the LTPS TFTs on plastic substrates. In this study, by giving LTPS devices off‐state bias stress one millisecond, it could get an excellent off‐state current from 50 pA to 2pA when device operate at VGS=+7V, VDS=‐5.1V. This could be attributed to electron trapping occur in gate insulator could reduce off‐state electric field near to drain region.