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P‐6: The Effects of Buffer Layers on the Electrical Characteristics and Stability of Self‐Aligned Top‐Gate IGZO Thin Film Transistors
Author(s) -
Ho Yi-Da,
Yang Yu-Xin,
Yang Ching-Fei,
Li Hung-Wei,
Tsai Chih-Hung,
Lu Hsueh-Hsing,
Lin Yu-Hsin
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11878
Subject(s) - materials science , thin film transistor , buffer (optical fiber) , reliability (semiconductor) , threshold voltage , optoelectronics , transistor , layer (electronics) , stress (linguistics) , thermal stability , voltage , electrical engineering , nanotechnology , chemistry , engineering , power (physics) , linguistics , physics , philosophy , organic chemistry , quantum mechanics
The composition of buffer layer would be played a key role to affect the electrical performance and the reliability of the self‐aligned top‐gate a‐IGZO TFTs. In this work, the threshold voltage shift (ΔVth) of the device could be less than ±1V under positive and negative bias thermal illumination stress.