P‐6: The Effects of Buffer Layers on the Electrical Characteristics and Stability of Self‐Aligned Top‐Gate IGZO Thin Film Transistors | Zendy

Ho Yi-Da | Zendy; Yang Yu-Xin | Zendy; Yang Ching-Fei | Zendy; Li Hung-Wei | Zendy; Tsai Chih-Hung | Zendy; Lu Hsueh-Hsing | Zendy; Lin Yu-Hsin | Zendy

Premium

P‐6: The Effects of Buffer Layers on the Electrical Characteristics and Stability of Self‐Aligned Top‐Gate IGZO Thin Film Transistors

Author(s) -

Ho Yi-Da,

Yang Yu-Xin,

Yang Ching-Fei,

Li Hung-Wei,

Tsai Chih-Hung,

Lu Hsueh-Hsing,

Lin Yu-Hsin

Publication year - 2017

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.11878

Subject(s) - materials science , thin film transistor , buffer (optical fiber) , reliability (semiconductor) , threshold voltage , optoelectronics , transistor , layer (electronics) , stress (linguistics) , thermal stability , voltage , electrical engineering , nanotechnology , chemistry , engineering , power (physics) , linguistics , physics , philosophy , organic chemistry , quantum mechanics

The composition of buffer layer would be played a key role to affect the electrical performance and the reliability of the self‐aligned top‐gate a‐IGZO TFTs. In this work, the threshold voltage shift (ΔVth) of the device could be less than ±1V under positive and negative bias thermal illumination stress.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research