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P‐18: Nitrogen‐Doped Amorphous InGaZnO Thin Film Transistors Capped with Molybdenum‐Doped ZnO Ultraviolet‐Shield Layers
Author(s) -
Xie Haiting,
Xu Jianeng,
Zhang Lei,
Liu Guochao,
Zhou Yan,
Dong Chengyuan
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11876
Subject(s) - thin film transistor , materials science , doping , amorphous solid , optoelectronics , stress (linguistics) , ultraviolet , molybdenum , layer (electronics) , thin film , composite material , nanotechnology , metallurgy , chemistry , crystallography , linguistics , philosophy
Nitrogen‐doped amorphous InGaZnO (a‐IGZO:N) and Molybdenum‐doped ZnO (MZO) were combined to prepare more stable thin film transistors (TFTs). The superior positive bias stress, negative bias stress, and negative bias illumination stress stabilities were observed for the a‐IGZO:N TFTs capped with MZO films, which might be due to the channel‐layer improvement by the nitrogen‐doping, the shield of ultraviolet‐lights by the MZO, and the good interface between the a‐IGZO:N and MZO.