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P‐4: TCAD Simulation of Hydrogen Diffusion Induced Bias Temperature Instability in a‐IGZO Thin‐Film Transistors
Author(s) -
Kong SungWon,
Wilson Stephen,
Kimpton Derek,
Guichard Eric
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11875
Subject(s) - thin film transistor , materials science , instability , diffusion , negative bias temperature instability , optoelectronics , transistor , hydrogen , amorphous solid , engineering physics , electronic engineering , nanotechnology , electrical engineering , threshold voltage , chemistry , engineering , thermodynamics , physics , mechanics , crystallography , layer (electronics) , organic chemistry , voltage
Since the first introduction of amorphous IGZO TFTs, many researchers have investigated the temperature, bias, and luminous instability mechanisms of these devices. In this paper we have developed TCAD process and device models, including hydrogen diffusion and transport to explain degradation phenomena. Our approach has been validated using measurements data.