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P‐16: Implementation of TCAD Simulation of a‐IGZO Corbino TFTs for AMOLED Application
Author(s) -
Han Ji-Ung,
Lee Won-Seok,
Tak Nam-Kyun,
Choi In-Chol,
Kim Jin-young,
Hwang Man-gyu,
Geng Di,
Choe Younwoo,
Jang Jin
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11872
Subject(s) - amoled , thin film transistor , materials science , optoelectronics , amorphous solid , electrode , transistor , electronic engineering , electrical engineering , nanotechnology , voltage , engineering , physics , chemistry , layer (electronics) , active matrix , crystallography , quantum mechanics
We studied the effects of Corbino structure amorphous indium‐galium‐zinc oxide (a‐IGZO) thin film transistors (TFTs) using TCAD and circuit simulator. The Corbino structure shows the special behavior with drain electrode in inner or outer. By simulation, we confirm the Corbino structure have better performance than conventional structure for AMOLED pixel circuit.