Premium
P‐2: Self‐Aligned Indium Gallium Zinc Oxide Thin‐Film Transistor with Source/Drain Regions Treated by NH3Plasma
Author(s) -
Chen Jiangbo,
Gu Pengfei,
Xie Dini,
Liu Wei,
Sun Hongda,
Song Young Suk,
Yan Liangchen,
Wu Zhongyuan
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11871
Subject(s) - thin film transistor , gallium , zinc , materials science , indium , plasma , transistor , analytical chemistry (journal) , optoelectronics , nanotechnology , metallurgy , chemistry , electrical engineering , layer (electronics) , chromatography , physics , engineering , quantum mechanics , voltage
We present the impact of S/D contact formation by NH 3 , N 2 and He plasma treatment, respectively. NH 3 plasma treatment showed the best electrical properties during the unit test. Furthermore, the self‐aligned a‐IGZO TFT was used NH 3 treatment, with a V th shift of 0.2 V for the positive bias temperature stress.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom