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P‐2: Self‐Aligned Indium Gallium Zinc Oxide Thin‐Film Transistor with Source/Drain Regions Treated by NH3Plasma
Author(s) -
Chen Jiangbo,
Gu Pengfei,
Xie Dini,
Liu Wei,
Sun Hongda,
Song Young Suk,
Yan Liangchen,
Wu Zhongyuan
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11871
Subject(s) - thin film transistor , gallium , zinc , materials science , indium , plasma , transistor , analytical chemistry (journal) , optoelectronics , nanotechnology , metallurgy , chemistry , electrical engineering , layer (electronics) , chromatography , physics , engineering , quantum mechanics , voltage
We present the impact of S/D contact formation by NH 3 , N 2 and He plasma treatment, respectively. NH 3 plasma treatment showed the best electrical properties during the unit test. Furthermore, the self‐aligned a‐IGZO TFT was used NH 3 treatment, with a V th shift of 0.2 V for the positive bias temperature stress.