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P‐14: Prevention of Indium Segregation in BCE Type InGaZnO TFTs with Titanium Source/Drain
Author(s) -
Kim Jeong Hyeon,
Kim Byoung O,
Seo Jong Hyun
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11868
Subject(s) - materials science , titanium , indium , thin film transistor , electrode , etching (microfabrication) , optoelectronics , metallurgy , composite material , layer (electronics) , chemistry
Electrical properties of back channel etching type amorphous Indium‐gallium‐zinc oxide thin film transistors with pure titanium and two titanium alloy electrodes were compared. Among the three electrodes, new titanium alloy shows the best TFT performance both in terms of mobility and threshold voltage and pure titanium electrode shows the worst performance. In cases of titanium electrode, indium protrusions were observed on the surface of IGZO semiconductor after source/drain back channel etching. The poor electrical performance of titanium source/drain is attributed to indium protrusions acting as electron trap sites. In this study, a new mechanism on indium segregation is proposed and effective prevention method is suggested.