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P‐9: Parylene / Al 2 O 3 Double Layer Passivated Amorphous InGaZnO Thin‐Film Transistors
Author(s) -
Zhou Xiaoliang,
Wang Gang,
Shao Yang,
Zhang Letao,
Lu Huiling,
Chen Shuming,
Han Dedong,
Wang Yi,
Zhang Shengdong
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11858
Subject(s) - thin film transistor , passivation , materials science , amorphous solid , parylene , layer (electronics) , optoelectronics , sputtering , oxide thin film transistor , transistor , thin film , nanotechnology , polymer , electrical engineering , crystallography , composite material , chemistry , engineering , voltage
Amorphous InGaZnO thin‐film transistors (a‐IGZO TFTs) passivated by parylene / Al 2 O 3 double layer are fabricated. The parylene layer prevents the channel layer from ion bombardment during Al 2 O 3 sputtering. Al 2 O 3 blocks O 2 and water effectively. It is shown that a‐IGZO TFTs with the proposed passivation are stable in the ambient atmosphere.