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P‐8: Photocurrent Characteristics of Amorphous MgInO Thin Film Transistors
Author(s) -
Lu Huiling,
Zhang Letao,
Zhou Xiaoliang,
Zhou Hang,
Zhang Shengdong
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11856
Subject(s) - photocurrent , materials science , thin film transistor , optoelectronics , amorphous solid , gate voltage , wavelength , transistor , threshold voltage , voltage , nanotechnology , electrical engineering , chemistry , crystallography , engineering , layer (electronics)
The photocurrent characteristics of amorphous MgInO (a‐MIO) thin film transistors (TFTs) under double sweep method are investigated. The gate voltage independent photocurrent characteristics under reverse gate voltage sweep in off‐state are observed and a current model is developed. As the wavelength decreases, the mobility‐lifetime (η int μ n τ) products extracted from the model increase on a logarithmic scale. The dynamic behavior of our TFTs is also investigated, showing that as the wavelength decreases from 400 nm to 310 nm, the decay time constant increases from 194 s to 302 s.