Premium
66‐1: Invited Paper : High Mobility Flexible 2D Multilayer MoS2 TFTs on Solution‐Based Polyimide Substrates
Author(s) -
Hong Seongin,
Naqi Muhammad,
Jung Uihyun,
Liu Na,
Kwon Hyuk-Jun,
Grigoropoulos Costas P.,
Hong Young Ki,
Kim Sunkook
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11811
Subject(s) - molybdenum disulfide , polyimide , flexible electronics , materials science , bend radius , transistor , optoelectronics , radius of curvature , substrate (aquarium) , flexible display , bending , fabrication , electron mobility , electronics , field effect transistor , thin film transistor , radius , curvature , nanotechnology , composite material , electrical engineering , computer science , engineering , alternative medicine , mathematics , computer security , voltage , mean curvature , oceanography , pathology , mean curvature flow , geometry , layer (electronics) , medicine , geology
We report on Molybdenum disulfide (MoS2) based Transition metal dichalcogenides (TMDs) transistor as flexible/stretchable electronics with consistent carrier mobility, wide band‐gap and mechanical expanse by using polyimide (PI) flexible substrate. Transistors fabricated in the following experiment have worthy properties: a field‐effect‐mobility measured as 108.6 cm 2 V ‐1 s ‐1 and an (I on /I off ) ratio obtained as 5×10 5 . Moreover, no deviations occurred under methodical cyclic bending tests with bending radius of curvature of 10 and 5mm. Overall in the malleable areas of flexible integrated circuitry fabrication, the stated electrical and mechanical consequences provide significant applications.