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49‐3: In‐Cell Active Touch Circuit Using a‐Si TFT for Large Size Panel
Author(s) -
Cheu Wei-Jia,
Tai Ya-Hsiang,
Lin Chi-Hao,
Hsiao Pei-Hung
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11753
Subject(s) - capacitance , thin film transistor , electrode , optoelectronics , transistor , materials science , electrical engineering , line (geometry) , parasitic capacitance , computer science , engineering , voltage , physics , mathematics , geometry , quantum mechanics
In this paper, we present an advanced in‐cell active touch circuit using a‐Si thin film transistors (TFTs) for large size panel. The circuit design is different from traditional mutual‐capacitance and self‐capacitance in‐cell touch panel which are so‐called passive touch circuit. The touch capacitance formed between the touching finger and the common electrode of IPS LC is used to share the charge with the couple capacitance on common electrode. The sensing line is used to sense the current of the active device for different charging status to determine whether an external object are touched or approached.