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49‐2: Design of a‐Si:H Bidirectional Gate Driver Circuit Using Time Division Driving Method for In‐Cell Touch Active‐Matrix Liquid Crystal Displays
Author(s) -
Deng Ming-Yang,
Tsai Meng-Chieh,
Chen Yung-Chih,
Chen Po-Syun,
Lin Chih-Lung
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11751
Subject(s) - active matrix , thin film transistor , liquid crystal display , waveform , materials science , threshold voltage , voltage , electronic circuit , reliability (semiconductor) , transistor , gate driver , optoelectronics , driver circuit , electrical engineering , division (mathematics) , electronic engineering , computer science , engineering , nanotechnology , physics , power (physics) , layer (electronics) , quantum mechanics , arithmetic , mathematics
This work presents a new bidirectional gate driver circuit using hydrogenated amorphous silicon (a‐Si:H) thin‐film transistors (TFTs) for applying to in‐cell touch panels. The proposed circuit allows the touch panel to pause the display operation to perform the touch sensing operations to increase the touch reporting rate. Furthermore, the proposed circuit can avoid severe threshold voltage shift (V TH ) of driving TFT during the long‐term touch sensing operation, enhancing the reliability of the circuit. Based on the measured electrical characteristics of a fabricated a‐Si:H TFT, the simulation results indicate that the differences of rising time and falling time of output waveforms are less than 8 %.