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42‐4L: Late‐News Paper : Chemical Stability Improvement in IGZO Using Selective Laser Annealing System
Author(s) -
Goto Tetsuya,
Saito Kaori,
Imaizumi Fuminobu,
Mizumura Michinobu,
Suwa Akira,
Ikenoue Hiroshi,
Sugawa Shigetoshi
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11711
Subject(s) - thin film transistor , annealing (glass) , materials science , laser , excimer laser , optoelectronics , lithography , amorphous solid , irradiation , chemical stability , optics , nanotechnology , chemical engineering , chemistry , composite material , crystallography , physics , engineering , layer (electronics) , nuclear physics
Selective laser annealing system using KrF excimer laser was applied to amorphous IGZO films. IGZO film was crystallized for the laser‐irradiated area (60μm square), where the chemical stability against acid solutions was improved. The stability against the negative bias illumination stress for the laser‐treated TFT was improved. Furthermore, TFT could be fabricated without the photo lithography for the islandpatterning.