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42‐1: Development of Cu BCE‐Structure IGZO TFT for a High‐ppi 31‐in. 8K × 4K GOA LCD
Author(s) -
Ge Shi-Min,
Li Shan,
Chen Shu-Jhih,
Kong Xiang-Yong,
Meng Yan-Hong,
Shi Wen,
Shi Long-Qiang,
Wu Wei,
Liu X,
Gan Qi-Ming,
Zhao Yang,
Zhang CK,
Chiu Chung-Yi,
Lee Chia-Yu
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11705
Subject(s) - passivation , thin film transistor , reliability (semiconductor) , liquid crystal display , materials science , optoelectronics , layer (electronics) , threshold voltage , voltage , electrical engineering , nanotechnology , transistor , engineering , physics , power (physics) , quantum mechanics
The electrical characteristics of the BCE‐structure IGZO TFTs were studied. Through modifying the passivation layer and optimizing the selection of copper acid and PFA material, the TFTs exhibited good threshold voltage and reliability. Finally, a high performance 31‐inch 8K4K GOA LCD was demonstrated.