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30‐4: Characterization of Si Thin Films Doped by Wet‐Chemical Laser Processing
Author(s) -
Suwa Akira,
Tanaka Nozomu,
Sadoh Taizoh,
Nakamura Daisuke,
Ikenoue Hiroshi
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11659
Subject(s) - doping , materials science , dopant , characterization (materials science) , thin film , electrical resistivity and conductivity , laser , analytical chemistry (journal) , dopant activation , optoelectronics , nanotechnology , optics , chemistry , electrical engineering , chromatography , physics , engineering
In this paper, we report on the characterization of Si thin films doped by wet‐chemical laser processing. Using this method, implantation and dopant activation can be performed simultaneously. After laser doping, the mobility, carrier concentration, and resistivity of the films were 74 cm 2 /V·s, 5.5 × 10 17 cm −3 , and 0.15 Ω·cm, respectively.