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28‐1: Invited Paper : Effect of Channel Defining Layer on the Vertical Oxide TFTs for the Application to the Ultra High Resolution Display
Author(s) -
Lee Seung-Hee,
Lee Kwang-Heum,
Nam Yunyong,
Ko Jong-Beom,
Yeom Hye-In,
Hwang Chi-Sun,
Park Sang-Hee Ko
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11642
Subject(s) - thin film transistor , channel (broadcasting) , materials science , saturation (graph theory) , optoelectronics , layer (electronics) , leakage (economics) , polyimide , electrical engineering , nanotechnology , engineering , mathematics , combinatorics , economics , macroeconomics
We investigated the effect of back channel material which plays as a channel defining layer in vertical TFT for the application to the TFT of ultra‐high resolution display. Although the IGZO vertical TFT with polyimide back channel has low mobility, it shows good on/off ratio higher than 10 7 , low gate leakage current, and hard saturation behavior with channel length of 1 um.