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16‐1: Low‐Power Oxide‐Semiconductor Display System
Author(s) -
Kurokawa Yoshiyuki,
Kunitake Hitoshi,
Harada Shintaro,
Akasawa Fumika,
Okamoto Yuki,
Nakagawa Takashi,
Aoki Takeshi,
Yoneda Seiichi,
Inoue Hiroki,
Kozuma Munehiro,
Ikeda Takayuki,
Yao Hai Biao,
Shuai Chi Chang,
Lin Hung Chan,
Wu Shao Hui,
Ikeda Makoto,
Yamazaki Shunpei
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11627
Subject(s) - power consumption , power (physics) , semiconductor , power gating , computer science , gating , mode (computer interface) , electrical engineering , ultra low power , embedded system , computer hardware , materials science , engineering , transistor , operating system , physics , voltage , psychology , quantum mechanics , neuroscience
An oxide semiconductor (OS) display system built with normally‐off devices, nonvolatile OS LSI and an OS display, is proposed. The power consumption of the system is reduced by the nonvolatile OS LSI performing power gating without vanishing setting data when the OS display is in an idling stop (IDS) mode.