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14‐4L: Late‐News Paper : Self‐Pattern Process of InZnO Thin‐Film Transistors using Photosensitive Precursors
Author(s) -
Kim Hee Jun,
Kim Yeong-gyu,
Park Sung Pyo,
Kim Dongwoo,
Kim Na-eun,
Choi Jong Sun,
Kim Hyun Jae
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11619
Subject(s) - thin film transistor , materials science , optoelectronics , transistor , solution process , thin film , irradiation , nanotechnology , layer (electronics) , electrical engineering , voltage , physics , engineering , nuclear physics
We demonstrated self‐patternable InZnO (IZO) thin‐film transistors (TFTs) using photosensitive precursors. UV‐irradiated films became cross‐linked and solution‐processed IZO films were patterned successfully. Compared to self‐patterned IZO TFTs using photosensitive activators, precursor‐based self‐patterned IZO TFTs have better electrical characteristics and stability due to having less organic residues.