Premium
14‐1: Large‐Area Processing of Solution Type Metal‐Oxide in TFT Backplanes and Integration in Highly Stable OLED Displays
Author(s) -
Marinkovic Marko,
Takata Ryo,
Neumann Anita,
Pham Duy Vu,
Anselmann Ralf,
Maas Joris,
van der Steen Jan-Laurens,
Gelinck Gerwin,
Katsouras Ilias
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11612
Subject(s) - backplane , thin film transistor , materials science , oled , optoelectronics , substrate (aquarium) , layer (electronics) , amoled , reliability (semiconductor) , oxide thin film transistor , oxide , electrical engineering , composite material , metallurgy , engineering , active matrix , power (physics) , oceanography , physics , quantum mechanics , geology
Solution type metal‐oxide semiconductor was processed on mass‐production ready equipment and integrated in a backplane with ESL architecture TFTs. Excellent thickness uniformity of the semiconductor layer was obtained over the complete Gen1 glass substrate (320 mm x 352 mm), resulting in homogeneous TFT performance and bias stress reliability. An 85‐ppi QVGA AMOLED display is demonstrated.