Premium
13‐4: Invited Paper : Charge Generation Junction for Quantum‐dot Light Emitting Diodes
Author(s) -
Kim Hyo-Min,
Hwang Eunsa,
Kim Jeonggi,
Jang Jin
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11609
Subject(s) - quantum dot , optoelectronics , diode , light emitting diode , materials science , cathode , tandem , oled , stack (abstract data type) , work function , nanotechnology , electrical engineering , computer science , layer (electronics) , engineering , composite material , programming language
Charge generation junction (CGJ) is widely used in tandem organic light emitting diodes (OLEDs), mainly fabricated by vacuum deposition. But solution processed CGJs are used for quantum‐dot light emitting diodes (QLEDs). It is demonstrated in this work that the QLEDs with top and bottom CGJs have similar device performance with conventional QLED. The current and power efficiencies of the QLED with top and bottom CGLs are almost independent on the work function of cathode metal, which demonstrates the effectiveness of the CGJs. Double stack QLED is designed and fabricated with the same three CGJs with 3 kinds of materials and two different quantum‐dots materials.