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21‐2: Highly Reliable Amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide TFTs with Back‐Channel‐Etch Structure
Author(s) -
Lu Xin-Hong,
Wang Ke,
Hu Hehe,
Zhang Wenlin,
Ning Ce,
Yang Wei,
Wang Jiushi,
Yao Qi,
Cao Zhanfeng,
Yuan Guangcai,
Huang Yinglong
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11608
Subject(s) - materials science , thin film transistor , optoelectronics , amorphous solid , indium tin oxide , tin , layer (electronics) , gallium , zinc , electronic engineering , metallurgy , composite material , engineering , chemistry , organic chemistry
Back‐channel‐etch‐structured thin‐film transistors (TFTs) employing amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide (IGZTO) and Mo/Al as active layer and source/drain, respectively, were demonstrated with good electronic property and bias‐temperature‐stress stability. LCD panels addressed by such TFTs with gate‐driver‐on‐array circuit passed the 1000‐hour high‐temperature‐operating and high‐temperature/humidity‐operating reliability tests, revealing excellent prospect for mass‐production.