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24‐4: Flexible AMOLED based on Oxide TFT with High Mobility
Author(s) -
Wang Lei,
Ruan Chongpeng,
Xu Hua,
Le Min,
Zou Jianhua,
Tao Hong,
Zhou Lei,
Pang Jiawei,
Lan Linfeng,
Ning Honglong,
Wu Weijing,
Yao Rihui,
Xu Miao,
Peng Junbiao
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11604
Subject(s) - thin film transistor , amoled , materials science , optoelectronics , flexible display , polyimide , atomic layer deposition , bend radius , transistor , oled , oxide , layer (electronics) , nanotechnology , composite material , bending , active matrix , electrical engineering , metallurgy , engineering , voltage
We report a high performance foldable and rollable AMOLED display with 300 ppi (real RGB) driven by oxide thin film transistors (TFTs) based on a polyimide (PI) substrate. No new defects appear on the display after 100,000 times bending with radius of curvature at 3 mm. In the oxide TFT, the Lanthanide rare earth doped In‐Zn‐O (LnIZO) is employed as the key active layer to improve the mobility and stability. The fabricated Ln‐IZO TFT with BCE process exhibits a high field‐effect mobility of ~40 cm 2 V ‐1 s ‐1 , a subthreshold swing of 0.13 V/decade, and an I on /I off ratio of 10 9 . Meanwhile, laminated Al 2 O 3 /MgO film prepared by the method of atomic layer deposition (ALD) is used as the encapsulation of AMOLED display.