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7‐4: Invited Paper : Internal Compensation Type OLED Display Using High Mobility Oxide TFT
Author(s) -
Jang Yong Ho,
Kim Dae Hwan,
Choi Wooseok,
Kang Min-Gu,
Chun Kwang Il,
Jeon Jeyong,
Ko Younghyun,
Choi Uyhyun,
Lee Seung Min,
Bae Jong Uk,
Park Kwon-shik,
Yoon Soo Young,
Kang In Byeong
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11567
Subject(s) - thin film transistor , oled , compensation (psychology) , materials science , oxide thin film transistor , oxide , optoelectronics , pixel , threshold voltage , electronic circuit , electrical engineering , voltage , computer science , transistor , engineering , nanotechnology , artificial intelligence , psychology , layer (electronics) , metallurgy , psychoanalysis
An internal compensation type OLED display with high mobility oxide TFT is presented. The pixel circuit for self‐compensation of threshold voltage variation and the integrated gate drivers (GIP) were fabricated using coplanar‐structure oxide TFTs on both glass and PI substrates. The 5.5‐in. FHD display panels show marked uniformity and durability to image sticking with compensation. The circuits have sufficient stability during operation at 60 o C for over 1,000 hours.